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Shows achievements in low dispersion buffers, high current high-threshold voltage p-GaN devices at IEDM 2015.
December 18, 2015
By: DAVID SAVASTANO
Editor, Ink World Magazine
At the IEEE International Electron Devices Meeting 2015, imec presented three novel aluminum gallium nitride (AlGaN)/gallium nitride (GaN) stacks featuring optimized low dispersion buffer designs. IMEC optimized the epitaxial p-GaN growth process on 200mm silicon wafers, achieving e-mode devices featuring beyond state-of-the-art high threshold voltage (Vt) and high drive current (Id). To achieve a good, current-collapse-free device operation in AlGaN/GaN-on-Silicon (Si) devices, dispersion m...
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